Manufacturer Part Number
IR2011SPBF
Manufacturer
Infineon Technologies
Introduction
High-performance Power Management Gate Driver
Product Features and Performance
Dual Independent Channels
High-Side or Low-Side Driven Configuration
Support for N-Channel MOSFET Gate Driving
Rise Time 35ns Typical
Fall Time 20ns Typical
Input Type Inverting
High Side Voltage Max (Bootstrap) 200 V
Product Advantages
Robust Output Drive Current of 1A Source and Sink
Wide Supply Voltage Range 10V to 20V
High Operating Temperature Range -40°C to 150°C
Logic-Level Compatibility VIL 0.7V, VIH 2.2V
Designed for Surface Mount Technology with SOIC-8 Packaging
Key Technical Parameters
Number of Drivers 2
Voltage - Supply 10V to 20V
Logic Voltage - VIL 0.7V, VIH 2.2V
Current - Peak Output 1A Source, 1A Sink
Rise / Fall Time 35ns / 20ns
High Side Voltage - Max (Bootstrap) 200 V
Operating Temperature Range -40°C to 150°C
Quality and Safety Features
Integrated Under-Voltage Lockout Protection
Designed to Meet Stringent Industrial Standards
Compatibility
Compatible with Various N-Channel MOSFETs
Application Areas
Power Converters
Motor Control Circuits
Switch Mode Power Supplies
Power Management Applications
Product Lifecycle
Status Active
Continued Manufacturer Support
Several Key Reasons to Choose This Product
High Drive Strength for Fast Switching Applications
Flexible High-Side or Low-Side Configuration
Enhanced Thermal Performance for High-Temperature Operations
Simple Integration with Logic-Level Control Input
High Reliability and Longevity in Power Management Circuits
Comprehensive Industry Use for Versatile Power Management Tasks