Manufacturer Part Number
IPW65R190C7
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET with CoolMOS technology
Product Features and Performance
Drain-Source Voltage: 650V
Continuous Drain Current: 13A @ 25°C
On-State Resistance (Rds(on)): 190mΩ
Input Capacitance (Ciss): 1150pF
Power Dissipation: 72W
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Efficient power conversion with low switching and conduction losses
Robust design for reliable operation
Reduced system size and cost
Key Technical Parameters
MOSFET Technology: N-Channel
Package: TO-247-3
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable performance
Compatibility
Compatible with various power electronics applications
Application Areas
Switching power supplies
Motor drives
Induction heating
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Reliable and robust design for long-term operation
Suitable for a wide range of power electronics applications
Proven CoolMOS technology for superior performance
