Manufacturer Part Number
IPW65R110CFDFKSA1
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
650V Drain-to-Source Voltage
110mOhm Max On-Resistance @ 12.7A, 10V
2A Continuous Drain Current @ 25°C (Tc)
3240pF Max Input Capacitance @ 100V
8W Max Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide temperature range for diverse applications
Key Technical Parameters
Vdss: 650V
Vgs (Max): ±20V
Rds On (Max): 110mOhm
Id (Continuous): 31.2A
Ciss (Max): 3240pF
Pd (Max): 277.8W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Electric vehicle systems
Product Lifecycle
This product is currently in production and available. No discontinuation or replacement plans are known at this time.
Key Reasons to Choose This Product
High voltage and current handling
Low on-resistance for efficient power conversion
Wide operating temperature range
RoHS3 compliance for environmental responsibility
Through-hole mounting for versatile installation
