Manufacturer Part Number
IPW65R019C7
Manufacturer
Infineon Technologies
Introduction
The IPW65R019C7 is a high-performance, N-channel power MOSFET from Infineon Technologies. It is designed for use in a wide range of power switching and control applications.
Product Features and Performance
650V Drain-to-Source Voltage (Vdss)
19mΩ Maximum On-Resistance (Rds(on))
75A Continuous Drain Current (Id) at 25°C
215nC Maximum Gate Charge (Qg)
-55°C to 150°C Operating Temperature Range
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Product Advantages
Excellent switching performance
Low on-resistance for high efficiency
High voltage capability
Wide operating temperature range
Reliable and robust design
Key Technical Parameters
Vdss: 650V
Vgs(max): ±20V
Rds(on) @ Id, Vgs: 19mΩ @ 58.3A, 10V
Id @ 25°C: 75A
Ciss @ Vds: 9900pF @ 400V
Power Dissipation (max): 446W
Quality and Safety Features
Robust package design for reliable operation
Extensive testing and quality control measures
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
The IPW65R019C7 is an active product and currently available.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High voltage and current capabilities
Excellent efficiency and switching performance
Wide operating temperature range
Reliable and robust design
Extensive testing and quality control
