Manufacturer Part Number
IPW65R041CFDFKSA2
Manufacturer
Infineon Technologies
Introduction
The IPW65R041CFDFKSA2 is a high-performance N-Channel power MOSFET from Infineon Technologies' CoolMOS CFD2 series.
Product Features and Performance
650V breakdown voltage
Low on-resistance of 41mΩ
High continuous drain current of 68.5A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 8400pF
Maximum power dissipation of 500W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable design for demanding applications
Compact and optimized package for high power density
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 41mΩ
Continuous Drain Current (Id): 68.5A
Input Capacitance (Ciss): 8400pF
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Compatibility
This MOSFET is compatible with a wide range of power electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
The IPW65R041CFDFKSA2 is an actively supported product in Infineon's portfolio. There are no plans for discontinuation, and upgrades or replacement options may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
Robust and reliable design for demanding applications
Compact package for high power density
Wide operating temperature range for versatile use
RoHS3 compliance for environmentally-friendly applications
