Manufacturer Part Number
IPP80N06S2L-07
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET in TO-220 package designed for high-power applications.
Product Features and Performance
80A continuous drain current at 25°C
55V drain-to-source voltage
7mΩ maximum on-resistance at 60A, 10V
Low input capacitance of 3160pF at 25V
210W maximum power dissipation
N-channel enhancement mode MOSFET
Product Advantages
Optimized for high-efficiency and high-power applications
Ultra-low on-resistance for reduced conduction losses
High current handling capability
Excellent thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7mΩ @ 60A, 10V
Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 3160pF @ 25V
Power Dissipation (Pc): 210W
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability and safety-critical applications
Compatibility
Compatible with a wide range of high-power electronic systems and circuits.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in active production. No plans for discontinuation at this time.
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Optimized for high-power and high-efficiency applications
Excellent thermal performance for reliable operation
RoHS3 compliant for use in a wide range of applications
Proven reliability and quality from Infineon Technologies