Manufacturer Part Number
IPP80N06S2-09
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Current Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Product Advantages
High current capability
Low on-resistance
Suitable for high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Through Hole
Manufacturer's packaging: PG-TO220-3-1
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Package: Bulk
Quality and Safety Features
Stable and reliable performance
Compliance with safety standards
Compatibility
Compatible with a wide range of electronic devices and systems
Application Areas
Suitable for high-power switching applications, such as motor drives, power supplies, and industrial automation
Product Lifecycle
The product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High current capability for demanding applications
Low on-resistance for improved efficiency
Stable and reliable performance for long-term use
Compatible with a wide range of electronic devices and systems
Suitable for various high-power switching applications
