IPP037N06L3G - Infineon Technologies

Manufacturer Part Number

IPP037N06L3G

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel power MOSFET with very low on-state resistance

Product Features and Performance

Very low on-state resistance of 3.7 mΩ

High current capability of up to 90 A

Wide operating temperature range of -55°C to 175°C

High power dissipation capability of 167 W

Fast switching speed and low gate charge of 79 nC

Product Advantages

Excellent for high-current, high-efficiency power conversion applications

Enables compact and efficient power supply designs

Reliable operation across a wide temperature range

Key Technical Parameters

60 V Drain-to-Source Voltage (Vdss)

±20 V Gate-to-Source Voltage (Vgs)

90 A Continuous Drain Current (Id)

13,000 pF Input Capacitance (Ciss)

2 V Gate Threshold Voltage (Vgs(th))

Quality and Safety Features

Manufactured using Infineon's reliable MOSFET technology

Qualified to industry standards for quality and reliability

Robust design for safe and reliable operation

Compatibility

Suitable for a wide range of power conversion and control applications

Compatible with various electronic systems and circuit designs

Application Areas

Switch-mode power supplies

Motor drives

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and available from Infineon

No plans for discontinuation, ensuring long-term availability and support

Key Reasons to Choose This Product

Excellent performance-to-size ratio with very low on-state resistance

High current handling capability for efficient power conversion

Wide operating temperature range for reliable performance in harsh environments

Fast switching speed and low gate charge for high-efficiency designs

Robust and reliable design backed by Infineon's reputation for quality