Manufacturer Part Number
IPP034NE7N3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power, high-efficiency applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage (Vdss) of 75V
Low on-resistance (Rds(on)) of 3.4mΩ at 100A, 10V
High continuous drain current (ID) of 100A at 25°C
Low input capacitance (Ciss) of 8130pF at 37.5V
High power dissipation capability of 214W at Tc
Product Advantages
Excellent performance for high-power, high-efficiency applications
Robust thermal and electrical characteristics
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.4mΩ @ 100A, 10V
Continuous Drain Current (ID): 100A @ 25°C
Input Capacitance (Ciss): 8130pF @ 37.5V
Power Dissipation (Ptot): 214W @ Tc
Quality and Safety Features
Robust and reliable design
Suitable for high-temperature and high-power applications
Meets relevant safety and quality standards
Compatibility
Can be used in a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Several Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Wide operating temperature range and robust design
Low on-resistance and high current capability
Suitable for a variety of high-power, high-efficiency applications
Reliable and meets relevant safety and quality standards
