Manufacturer Part Number
IPD90N04S405ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD90N04S405ATMA1 is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for automotive and industrial applications.
Product Features and Performance
N-Channel MOSFET transistor
Low on-resistance (RDS(on)) of 5.2 mΩ
High continuous drain current (ID) of 86 A
Wide operating temperature range from -55°C to 175°C
Low input capacitance (Ciss) of 2960 pF
High power dissipation capability of 65 W
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-power switching applications
Robust design for automotive and industrial environments
AEC-Q101 qualified for automotive use
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 86 A
On-Resistance (RDS(on)): 5.2 mΩ
Input Capacitance (Ciss): 2960 pF
Power Dissipation (Ptot): 65 W
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
TO-252-3 (DPAK) package
Suitable for surface mount applications
Application Areas
Automotive electronics
Industrial power supplies and motor drives
Telecommunications equipment
Renewable energy systems
Product Lifecycle
The IPD90N04S405ATMA1 is an active product, and Infineon Technologies continues to support it.
Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Robust design and automotive-grade qualification for reliability
Compact and compatible TO-252-3 package for easy integration
Wide operating temperature range and high current handling capability
Proven track record in automotive and industrial applications
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