Manufacturer Part Number
IPD90N04S403ATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance, automotive-grade N-channel power MOSFET from Infineon Technologies.
Product Features and Performance
40V drain-source voltage rating
Very low on-resistance (3.2mΩ max. @ 90A, 10V)
Continuous drain current rating of 90A at 25°C case temperature
High power dissipation capability of 94W
Wide operating temperature range of -55°C to 175°C
AEC-Q101 qualified for automotive applications
Product Advantages
Excellent efficiency and power density
Robust design for demanding automotive environments
Suitable for a wide range of power conversion and switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.2mΩ max. @ 90A, 10V
Input Capacitance (Ciss): 5260pF max. @ 25V
Gate Charge (Qg): 66.8nC max. @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive use
Compatibility
TO-252-3 (D-Pak) surface mount package
Suitable for a variety of power conversion and switching applications
Application Areas
Automotive power electronics
Industrial motor drives
Switch-mode power supplies
Inverters and converters
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacements and upgrades are available from Infineon.
Key Reasons to Choose This Product
Excellent efficiency and power density for improved system performance
Robust design for reliable operation in demanding automotive environments
Wide operating temperature range and AEC-Q101 qualification for automotive use
Proven Infineon technology and quality
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