Manufacturer Part Number
IPD25N06S4L30ATMA2
Manufacturer
Infineon Technologies
Introduction
The IPD25N06S4L30ATMA2 is a high-performance N-channel power MOSFET designed for automotive and industrial applications. It offers excellent on-state resistance, fast switching, and high reliability.
Product Features and Performance
60V drain-source voltage rating
25A continuous drain current at 25°C
30mΩ maximum on-state resistance at 25A, 10V
Optimized for low gate charge and fast switching
Robust AEC-Q101 qualified design
Product Advantages
Efficient power conversion with low conduction losses
Reliable operation in harsh environments
Compact surface-mount package for space-saving designs
Key Technical Parameters
Vds: 60V
Vgs (max): ±16V
Rds(on) (max): 30mΩ @ 25A, 10V
Id (max): 25A
Ciss (max): 1220pF @ 25V
Qg (max): 16.3nC @ 10V
Power dissipation (max): 29W
Quality and Safety Features
ROHS3 compliant
AEC-Q101 qualified for automotive applications
Robust package design for high reliability
Compatibility
The IPD25N06S4L30ATMA2 is compatible with a wide range of automotive and industrial applications that require a high-performance power MOSFET.
Application Areas
Motor drives
Power supplies
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
The IPD25N06S4L30ATMA2 is a current production device and is not nearing discontinuation. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Robust design for reliable operation in demanding environments
Compact surface-mount package for space-saving designs
AEC-Q101 qualification for automotive applications
Optimized for fast switching and low gate charge
IPD25N06S4L30Texas Instruments