Manufacturer Part Number
IPD25CN10NGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET for power switching applications
Product Features and Performance
Optimized for high-efficiency power conversion
Low on-resistance for low conduction losses
Fast switching speed for high-frequency operation
Low gate charge for efficient gate drive
Robust avalanche capability
Product Advantages
Excellent power density and efficiency
Reliable and durable performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 35 A, 10 V
Continuous Drain Current (Id) @ 25°C: 35 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Power Dissipation (Max): 71 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 39 A
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Robust design for reliable operation
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently available and widely used in the market.
Key Reasons to Choose This Product
Excellent power efficiency and density
Reliable and durable performance
Suitable for a wide range of power applications
Easy to integrate and design with
Backed by Infineon's reputation for quality and innovation