Manufacturer Part Number
IPD200N15N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for power electronics applications
Product Features and Performance
150V Drain-Source Voltage (Vdss)
20mΩ Maximum On-Resistance (Rds(on)) at 50A, 10V
50A Continuous Drain Current (Id) at 25°C
150W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Optimized for high efficiency and compact power designs
Low on-resistance for reduced power losses
Robust and reliable design for harsh environments
Key Technical Parameters
N-Channel MOSFET
TO-252-3 (DPak) Package
RoHS3 Compliant
Quality and Safety Features
Qualified to AEC-Q101 standard for automotive applications
Highly reliable and robust construction
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial controls
Application Areas
Power conversion
Motor control
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High efficiency and reliability for demanding applications
Broad compatibility and suitability for various power electronics designs
Backed by Infineon's expertise and quality standards
IPD170N04NGVBSEMI