Manufacturer Part Number
IPD180N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor in the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) category.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 100V
Maximum Gate-Source Voltage (Vgs) of ±20V
On-State Resistance (Rds(on)) of 18mOhm @ 33A, 10V
Continuous Drain Current (Id) of 43A at 25°C
Input Capacitance (Ciss) of 1800pF @ 50V
Maximum Power Dissipation of 71W at Tc (case temperature)
Gate Charge (Qg) of 25nC @ 10V
Product Advantages
Low on-state resistance for efficient power handling
Wide operating temperature range of -55°C to 175°C
Suitable for high-voltage, high-current applications
Key Technical Parameters
Technology: MOSFET
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 3.5V @ 33A
Drive Voltage: 6V (Max Rds(on)), 10V (Min Rds(on))
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: PG-TO252-3 (Surface Mount)
Compatibility
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Application Areas
Suitable for a wide range of high-voltage, high-current applications, such as power supplies, motor drives, and industrial electronics.
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
High efficiency due to low on-state resistance
Wide operating temperature range for versatile applications
Robust design and RoHS3 compliance for quality and safety
Surface mount packaging for easy integration into circuits
Proven performance and reliability from Infineon Technologies
IPD170N04NGVBSEMI