IPD096N08N3GATMA1 - Infineon Technologies

Manufacturer Part Number

IPD096N08N3GATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-Channel MOSFET transistor designed for various power conversion and control applications.

Product Features and Performance

80V drain-to-source voltage rating

Ultra-low on-resistance of 9.6 mOhm

Continuous drain current of 73A at 25°C

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 2410 pF

Maximum power dissipation of 100W

Product Advantages

Excellent power efficiency

High power density

Reliable performance across a wide temperature range

Suitable for high-current switching applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 80V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 9.6 mOhm

Continuous Drain Current (Id): 73A

Input Capacitance (Ciss): 2410 pF

Power Dissipation (Tc): 100W

Quality and Safety Features

RoHS3 compliant

Housed in a PG-TO252-3 package

Compatibility

Suitable for various power conversion and control applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Converters

Product Lifecycle

This product is an active part and not nearing discontinuation.

Replacements and upgrades may be available, but the exact options would need to be verified.

Key Reasons to Choose This Product

Excellent power efficiency and high power density

Reliable performance across a wide temperature range

Suitable for high-current, high-power switching applications

Robust and RoHS-compliant design