Manufacturer Part Number
IPD090N03LGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities.
Product Features and Performance
Low on-resistance (RDS(on) of 9 mOhm @ 30A, 10V)
High current handling capability (continuous drain current of 40A at 25°C)
Fast switching capability with low gate charge (15 nC @ 10V)
Wide operating temperature range (-55°C to 175°C)
Optimized for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent efficiency and thermal performance
Reduced power losses and heat generation
Enables compact and high-density power system designs
Supports high-frequency operation for improved system performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
Input Capacitance (Ciss): 1600 pF @ 15V
Power Dissipation (Tc): 42W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial and automotive applications
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
Currently available, no discontinuation or obsolescence issues
Upgrades and replacements may be available in the future as technology advances
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Fast switching capability for high-frequency operation
Robust and reliable design for industrial and automotive use
Compact size and high current handling capability enable compact system designs
Wide operating temperature range suitable for challenging environments
IPD09N03LVBSEMI