Manufacturer Part Number
IPD034N06N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET
Product Features and Performance
60V drain-source voltage
4mΩ on-resistance at 100A, 10V gate-source voltage
100A continuous drain current at 25°C case temperature
167W maximum power dissipation
-55°C to 175°C operating temperature range
Product Advantages
Optimized performance for high-current, high-efficiency applications
Robust design for rugged operating conditions
Key Technical Parameters
Vds: 60V
Vgs (max): ±20V
Rds(on) (max): 3.4mΩ @ 100A, 10V
Id (max): 100A @ 25°C
Ciss (max): 11000pF @ 30V
Qg (max): 130nC @ 10V
Quality and Safety Features
ROHS3 compliant
Qualified for industrial and automotive applications
Compatibility
TO-252-3 (D-Pak) package
Compatible with standard MOSFET drivers and control circuits
Application Areas
High-current, high-efficiency power conversion
Motor drives
Inverters
Switch-mode power supplies
Product Lifecycle
This is an active product with no discontinuation plans
Replacements and upgrades may be available from Infineon
Key Reasons to Choose This Product
Excellent performance-to-size ratio for high-current applications
Robust design for reliable operation under harsh conditions
Broad compatibility with standard MOSFET control and driver circuits
Backed by Infineon's reputation for quality and reliability
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IPD035N06L3INFIENEON