Manufacturer Part Number
IPD031N06L3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
N-channel device
Low on-resistance (RDS(on) = 3.1 mOhm @ 100 A, 10 V)
High continuous drain current (ID = 100 A @ 25°C)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 79 nC @ 4.5 V)
High power dissipation (167 W @ Tc)
Fast switching speed
Product Advantages
Excellent energy efficiency due to low conduction losses
High power density and compact design
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 100 A @ 25°C
Input Capacitance (Ciss): 13000 pF @ 30 V
Power Dissipation (Ptot): 167 W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (TO-252-3, D-Pak)
Tape and reel packaging
Application Areas
High-power motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent energy efficiency and low conduction losses due to low on-resistance
High power density and compact design
Reliable and robust performance across a wide temperature range
Suitable for high-power, high-current applications
Compatibility with standard surface mount packaging and tape and reel manufacturing
IPD035N06L3INFIENEON