IPBE65R050CFD7AATMA1 - Infineon Technologies

Manufacturer Part Number

IPBE65R050CFD7AATMA1

Manufacturer

Infineon Technologies

Introduction

This is a high-performance N-channel power MOSFET from Infineon Technologies. It is part of the CoolMOS CFD7A series and designed for automotive and industrial applications.

Product Features and Performance

650V drain-source voltage rating

Very low on-resistance of 50mOhm @ 24.8A, 10V

High continuous drain current of 45A at 25°C case temperature

Fast switching with low gate charge of 102nC @ 10V

Wide operating temperature range of -40°C to 150°C

AEC-Q101 qualified for automotive applications

Product Advantages

Excellent efficiency and power density

Robust and reliable performance

Optimized for high-frequency switching

Suitable for harsh automotive and industrial environments

Key Technical Parameters

Drain-Source Voltage (Vdss): 650V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 50mOhm @ 24.8A, 10V

Continuous Drain Current (Id): 45A @ 25°C

Input Capacitance (Ciss): 4975pF @ 400V

Power Dissipation (Pd): 227W @ Tc

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Robust package design for high reliability

Compatibility

This MOSFET is compatible with a wide range of industrial and automotive applications.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Battery charging and management systems

Industrial automation equipment

Product Lifecycle

This product is currently in active production and not nearing discontinuation. Upgrades and replacements may be available in the future as technology evolves.

Key Reasons to Choose This Product

Excellent efficiency and power density for high-performance applications

Robust and reliable performance in harsh environments

Optimized for high-frequency switching

AEC-Q101 qualification for automotive use

Wide operating temperature range and high current capability