Manufacturer Part Number
IPB90R340C3ATMA2
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor from the Infineon CoolMOS series.
Product Features and Performance
900V Drain-Source Voltage
340mΩ maximum on-resistance at 9.2A, 10V
15A continuous drain current at 25°C case temperature
2400pF maximum input capacitance at 100V
208W maximum power dissipation at case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage capability
Low on-resistance for efficient power conversion
High current handling
Suitable for high-frequency, high-efficiency power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 340mΩ @ 9.2A, 10V
Continuous Drain Current (ID): 15A @ 25°C case temperature
Input Capacitance (Ciss): 2400pF @ 100V
Power Dissipation: 208W @ case temperature
Quality and Safety Features
Compliant with RoHS 3 directive
Packaged in PG-TO263-3-2 (TO-263-3, D-Pak) surface mount package
Compatibility
Suitable for high-frequency, high-efficiency power conversion applications such as switch-mode power supplies, motor drives, and inverters
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Renewable energy systems
Product Lifecycle
This product is an active and currently available component from Infineon Technologies. There are no indications of it being discontinued or having limited availability.
Key Reasons to Choose This Product
High voltage capability up to 900V for use in high-power applications
Low on-resistance for efficient power conversion and reduced energy losses
High current handling of up to 15A for demanding power requirements
Compact surface mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C for harsh environments
RoHS 3 compliance for use in environmentally-conscious applications