Manufacturer Part Number
IPB80N03S4L-03
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance and optimized switching performance
Product Features and Performance
Low on-resistance of 3.7 mΩ @ 80 A, 10 V
High drain current capability of 80 A at 25°C case temperature
Fast switching with gate charge of 75 nC @ 10 V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal performance and power dissipation
Optimized for high-frequency switching applications
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±16 V
Input Capacitance (Ciss): 5100 pF @ 25 V
Power Dissipation (Tc): 94 W
Quality and Safety Features
Compliant with relevant industry standards
Rigorous quality control and testing processes
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Household appliances
Product Lifecycle
This product is currently in active production and availability is good
Upgrades and replacements may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and fast switching
Robust and reliable design for long-term operation
Suitable for a wide range of high-power, high-frequency applications
Comprehensive quality and safety features