Manufacturer Part Number
IPB77N06S3-09
Manufacturer
Infineon Technologies
Introduction
The IPB77N06S3-09 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Ultra-low On-state Resistance (RDS(on)) of 8.8 mΩ
High Drain Current Capacity of 77A (Tc)
Wide Operating Temperature Range of -55°C to 175°C
Low Input Capacitance of 5335 pF
Fast Switching Capability with Low Gate Charge of 103 nC
Product Advantages
Excellent Power Efficiency
High Power Density
Reliable and Robust Performance
Suitable for High-Power Applications
Key Technical Parameters
Drain to Source Voltage (VDS): 55V
Maximum Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 77A (Tc)
On-state Resistance (RDS(on)): 8.8 mΩ
Quality and Safety Features
Compliance with Relevant Safety and Environmental Standards
Robust Design for Reliable Operation
Compatibility
Suitable for a Wide Range of Power Electronics Applications
Application Areas
High-Power Switching Applications
Motor Drives
Industrial Power Supplies
Automotive Electronics
Product Lifecycle
Currently in Production
Readily Available Replacement Options
Key Reasons to Choose
Excellent Performance-to-Cost Ratio
Proven Reliability and Durability
Versatile Compatibility and Suitability for a Wide Range of Applications
Comprehensive Technical Support from Infineon Technologies