Manufacturer Part Number
IPB60R299CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with CoolMOS technology for high-efficiency power conversion applications
Product Features and Performance
High voltage rating up to 600V
Low on-resistance of 299mΩ
High continuous drain current of 11A at 25°C
Low input capacitance of 1100pF
Low gate charge of 29nC
Wide operating temperature range of -40°C to 150°C
Suitable for high-frequency switching applications
Product Advantages
Excellent efficiency and low power losses
Robust and reliable performance
Compact and easy to integrate design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 299mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 1100pF @ 100V
Power Dissipation (Pd): 96W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power conversion circuits and systems
Application Areas
High-efficiency power supplies
Power factor correction circuits
Synchronous rectification
Motor drives
Renewable energy systems
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and low power losses
Robust and reliable performance
Wide operating temperature range
Compact and easy to integrate design
RoHS3 compliance for high-reliability applications
Compatibility with various power conversion circuits and systems
