Manufacturer Part Number
IPB60R250CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS technology for power supply and switching applications.
Product Features and Performance
Optimized RDS(on) for high efficiency
Low gate charge for fast switching
Excellent thermal resistance for high power density
Wide operating temperature range of -55°C to 150°C
Product Advantages
Improved energy efficiency
Reduced switching losses
Increased power density
Reliable operation in high-temperature environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Vgs (Max): ±20V
RDS(on) (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Continuous Drain Current (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Power Dissipation (Max): 104W
Quality and Safety Features
RoHS3 compliant
Reliable performance in a wide temperature range
Compatibility
Surface mount, TO-263-3 (D-Pak) package
Application Areas
Switch mode power supplies
Motor drives
Welding equipment
Lighting ballasts
Induction heating
Power factor correction
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Exceptional energy efficiency through optimized RDS(on)
Fast switching performance with low gate charge
High power density due to excellent thermal resistance
Reliable operation in high-temperature environments
RoHS3 compliance for use in various applications
