Manufacturer Part Number
IPB50R250CP
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Operates at high voltages up to 500V
Low on-state resistance of 250mΩ
High current capability up to 13A
Fast switching performance
Low gate charge for efficient switching
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent efficiency for power conversion applications
Robust design for high reliability
Optimized for low switching and conduction losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 250mΩ @ 7.8A, 10V
Continuous Drain Current (Id): 13A @ 25°C
Input Capacitance (Ciss): 1420pF @ 100V
Power Dissipation (Tc): 114W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Surface mount, TO-263-3 (D-Pak) package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low losses for improved system performance
Robust and reliable design for long-term operation
Wide voltage and temperature range for diverse applications
Optimized switching characteristics for high-frequency operation
Surface mount package for easy integration into PCB designs
