Manufacturer Part Number
IPB50R199CP
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET in TO-263 package
Product Features and Performance
500V drain-source voltage rating
199mΩ maximum on-resistance
17A continuous drain current at 25°C
Low gate charge and input capacitance
Wide operating temperature range (-55°C to 150°C)
Optimized for high-frequency, high-efficiency switching applications
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high voltage, high power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 199mΩ @ 9.9A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1800pF @ 100V
Power Dissipation (Pd): 139W @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified to industrial and automotive standards
Compatibility
TO-263-3, DPak (2 Leads + Tab) package
Suitable for surface mount applications
Application Areas
Switch mode power supplies
Adapters and chargers
Industrial motor drives
Welding equipment
Solar inverters
Product Lifecycle
This product is an active and widely used MOSFET
Replacement and upgrade options are available from Infineon
Key Reasons to Choose
Excellent efficiency and power density
Reliable and robust design for demanding applications
Wide operating temperature range and high voltage rating
Optimized for high-frequency, high-efficiency switching