Manufacturer Part Number
IPB14N03LA
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
25V Drain-Source Voltage (Vdss)
30A Continuous Drain Current (Id)
6mOhm Typical On-Resistance (Rds(on)) @ 30A, 10V
Wide Temperature Range: -55°C to 175°C
Low Gate Charge (Qg): 8.3nC @ 5V
High Input Capacitance (Ciss): 1043pF @ 15V
Product Advantages
Efficient power conversion
Low conduction losses
Suitable for high-power applications
Key Technical Parameters
Package: TO-263-3, DPak (2 Leads + Tab)
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Vgs(th) (Max): 2V @ 20A
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Power Dissipation (Max): 46W
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Product Lifecycle
No information available on discontinuation or replacement products
Key Reasons to Choose This Product
High efficiency and low conduction losses
Suitable for high-power applications
Wide temperature range for robust operation
Compact and reliable TO-263-3 package
IPB140N08S4-04INF