Manufacturer Part Number
IPB144N12N3GATMA1
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product from Infineon Technologies, specifically a transistor-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
Product Features and Performance
N-Channel MOSFET
120V Drain-Source Voltage
56A Continuous Drain Current (at 25°C)
4mOhm On-Resistance (at 56A, 10V)
3220pF Input Capacitance (at 60V)
107W Power Dissipation (at 25°C)
-55°C to 175°C Operating Temperature Range
±20V Gate-Source Voltage
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Suitable for various power management applications
Key Technical Parameters
Drain-Source Voltage: 120V
Gate-Source Voltage: ±20V
On-Resistance: 14.4mOhm
Continuous Drain Current: 56A
Input Capacitance: 3220pF
Power Dissipation: 107W
Quality and Safety Features
RoHS3 compliant
Housed in a PG-TO263-3 package
Compatibility
Suitable for surface mount applications
Application Areas
Power supplies
Motor drives
Inverters
Power conversion circuits
Product Lifecycle
This product is an active and available part from Infineon Technologies.
Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental regulations
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