Manufacturer Part Number
IPB120P04P4L03ATMA2
Manufacturer
Infineon Technologies
Introduction
The IPB120P04P4L03ATMA2 is a high-performance P-channel MOSFET transistor from the OptiMOS-P2 series, designed for a wide range of power electronics applications.
Product Features and Performance
40V Drain-to-Source Voltage
120A Continuous Drain Current
4mΩ Maximum On-State Resistance
15000pF Maximum Input Capacitance
234nC Maximum Gate Charge
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent low on-state resistance for high efficiency
High current handling capability
Robust design for reliable operation
Compact TO-263-3 (D-Pak) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): +5V/-16V
On-State Resistance (Rds(on)): 3.4mΩ
Continuous Drain Current (Id): 120A
Input Capacitance (Ciss): 15000pF
Power Dissipation (Tc): 136W
Quality and Safety Features
RoHS3 Compliant
Suitable for harsh environments
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial power controls
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-state resistance
High current handling capability for demanding applications
Robust and reliable design for long-term operation
Compact package and ease of integration
Suitable for a wide range of power electronics applications
IPB140N08S4-04INF