Manufacturer Part Number
IPB120P04P4L03ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB120P04P4L03ATMA1 is a high-performance P-channel MOSFET from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 40V
Extremely low on-resistance (Rds(on)) of 3.1 mΩ at 100A, 10V
Continuous Drain Current (Id) of 120A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low input capacitance (Ciss) of 15,000 pF at 25V
High power dissipation capability of 136W at case temperature
Product Advantages
Excellent efficiency and low power losses
Robust and reliable performance
Suitable for high-current, high-power applications
Compact and space-saving DPak (TO-263-3) package
Key Technical Parameters
Vgs(th) (Max) of 2.2V at 340A
Gate Charge (Qg) (Max) of 234 nC at 10V
Drive Voltage (Max Rds On, Min Rds On) of 4.5V, 10V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments and temperature extremes
Compatibility
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Power inverters
Industrial and automotive electronics
Product Lifecycle
This product is still in active production and not nearing discontinuation.
Replacement or upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
Exceptional performance and efficiency
Robust and reliable operation
Compact and space-saving package
Suitable for a wide range of high-power applications
Backed by Infineon Technologies' quality and support
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