Manufacturer Part Number
IPB100N06S3L-03
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance for power conversion applications
Product Features and Performance
Ultra-low on-resistance of 2.7 mΩ at 80 A and 10 V
High current capability of 100 A at 25°C
Very low input capacitance of 26,240 pF at 25 V
Wide operating temperature range of -55°C to 175°C
High power dissipation of 300 W at Tc
Product Advantages
Excellent efficiency in power conversion applications
Robust and reliable performance
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 55 V
Gate to Source Voltage (Vgs): ±16 V
Continuous Drain Current (Id): 100 A at 25°C
On-Resistance (Rds(on)): 2.7 mΩ at 80 A, 10 V
Input Capacitance (Ciss): 26,240 pF at 25 V
Power Dissipation: 300 W at Tc
Quality and Safety Features
MOSFET technology for high reliability and efficiency
Robust design for industrial and automotive applications
Compliance with relevant safety standards
Compatibility
Compatible with a wide range of power conversion circuits and systems
Application Areas
Switching power supplies
Motor drives
Industrial and automotive power electronics
Product Lifecycle
Current product offering
No near-term discontinuation expected
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Exceptional performance with ultra-low on-resistance
High current handling capability
Compact and efficient design
Reliable and robust for demanding applications
Broad operating temperature range
Compatibility with various power conversion systems
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