Manufacturer Part Number
IPB100N04S4H2ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with optimized on-resistance and switching characteristics for power conversion and motor drive applications.
Product Features and Performance
Optimized on-resistance and switching characteristics
Suitable for power conversion and motor drive applications
Operates over a wide temperature range of -55°C to 175°C
Offers high current capability of up to 100A (Tc)
Low on-resistance of 2.4mOhm @ 100A, 10V
Minimized input capacitance of 7180pF @ 25V
Supports up to 40V drain-to-source voltage
Product Advantages
Improved efficiency and thermal performance
Allows for compact and high-density design
Enables reliable and robust power conversion
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs) (Max): ±20V
Continuous Drain Current (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 115W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Surface mount package (TO-263-3, DPak)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power conversion
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
Optimized performance for efficient power conversion
High current capability and low on-resistance for high-power applications
Wide operating temperature range for reliable operation in various environments
Compact surface mount package for space-constrained designs
RoHS compliance for use in eco-friendly applications
IPB100N06S2-05 MOSCypress Semiconductor (Infineon Technologies)