Manufacturer Part Number
IPB038N12N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in a surface-mount DPak package for high-current, high-power applications
Product Features and Performance
120V Drain-to-Source Voltage (Vdss)
120A Continuous Drain Current (Id) at 25°C
8mΩ Maximum On-Resistance (Rds(on)) at 100A, 10V
211nC Maximum Gate Charge (Qg) at 10V
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Optimized for high-current, high-power applications
Low on-resistance for improved efficiency
Compact DPak surface-mount package
Suitable for automotive and industrial applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 120V
Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V at 270A
Input Capacitance (Ciss): 13800pF at 60V
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
Automotive-grade qualification
Compatibility
Compatible with a wide range of high-current, high-power applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power supplies
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacement or upgrade options are available from Infineon.
Key Reasons to Choose This Product
Excellent performance characteristics for high-current, high-power applications
Compact surface-mount package for space-constrained designs
Robust design and wide operating temperature range
Automotive and industrial grade quality and safety features
