Manufacturer Part Number
IPB037N06N3GATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor with superior features and performance.
Product Features and Performance
60V drain-to-source voltage
90A continuous drain current at 25°C
7mΩ maximum on-resistance at 90A, 10V
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 11,000pF at 30V
Maximum power dissipation of 188W at case temperature
Product Advantages
Efficient power handling and low on-resistance
Compact and space-saving DPak (TO-263-3) package
Suitable for high-power switching and amplification applications
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 4V at 90A
Input Capacitance (Ciss): 11,000pF at 30V
Gate Charge (Qg): 98nC at 10V
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliability and performance
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-power switching or amplification
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Automotive electronics
Industrial automation and control
Product Lifecycle
This product is currently in active production and is not nearing discontinuation
Replacement or upgrade options are available if required
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design for demanding applications
Compact and space-saving package
Wide operating temperature range for versatile use
Proven performance and quality
IPB035N08NINF