Manufacturer Part Number
IPA80R650CEXKSA2
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
N-Channel
800V Drain-Source Voltage
650mΩ On-State Resistance
8A Continuous Drain Current
1100pF Input Capacitance
33W Power Dissipation
Wide Operating Temperature Range: -40°C to 150°C
Product Advantages
High Voltage Capability
Low On-State Resistance
High Current Handling
Compact TO-220-3 Package
Robust and Reliable Performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 650mΩ
Continuous Drain Current (Id): 8A
Input Capacitance (Ciss): 1100pF
Power Dissipation (Tc): 33W
Quality and Safety Features
RoHS3 Compliant
TO-220-3F Package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switched-Mode Power Supplies (SMPS)
Motor Drives
Induction Heating
Solar Inverters
Industrial Electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Compact and robust TO-220-3 package
Wide operating temperature range
RoHS compliance for environmental sustainability
Proven reliability and performance in various power electronics applications
