Manufacturer Part Number
IPA80R1K4P7
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET for power switching applications
Product Features and Performance
High voltage rating up to 800V
Low on-resistance for high efficiency
Fast switching speed
High current capability up to 4A
Wide operating temperature range from -55°C to 150°C
Product Advantages
Optimized for industrial and consumer power applications
Excellent thermal performance
Robust design for reliable operation
Easy to drive and integrate
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.4Ω @ 1.4A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 250pF @ 500V
Power Dissipation (Ptot): 24W @ Tc
Quality and Safety Features
Qualified to industrial and automotive standards
Robust construction for reliable operation
Overcurrent and overvoltage protection
Compatibility
Suitable for a wide range of power conversion and control applications
Easily integrated into existing designs
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Household appliances
Industrial automation and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgrade options are available from Infineon's CoolMOS product family
Key Reasons to Choose This Product
High voltage and current capability for efficient power switching
Low on-resistance for improved energy efficiency
Fast switching speed for high-frequency operation
Robust and reliable design for industrial and consumer applications
Easy to drive and integrate into existing designs
