Manufacturer Part Number
IPA65R190E6
Manufacturer
Infineon Technologies
Introduction
High-voltage power MOSFET device
Optimized for efficient hard-switching applications
Product Features and Performance
Extremely low on-state resistance (RDS(on))
Very low gate charge (Qg) for efficient switching
Robust avalanche capability
Optimized for high-frequency, high-efficiency power conversion
Product Advantages
Superior efficiency in hard-switching applications
Reduced power losses and improved thermal performance
Enables smaller, more compact power supply designs
Key Technical Parameters
Drain-to-Source Voltage (VDS): 650V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 190mΩ
Continuous Drain Current (ID): 20.2A
Input Capacitance (Ciss): 1620pF
Power Dissipation (Tc): 34W
Quality and Safety Features
Robust design for reliable operation
Compliant with safety and environmental standards
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Current production model, no discontinuation planned
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact design and easy integration
Reliable and durable for long-term use
Optimal for high-frequency, high-power conversion applications
