Manufacturer Part Number
IPA65R190C7
Manufacturer
Infineon Technologies
Introduction
The IPA65R190C7 is a high-performance N-Channel MOSFET transistor from the CoolMOS series, designed for a wide range of power conversion applications.
Product Features and Performance
650V Drain-Source Voltage
190mΩ On-Resistance (Rds(on)) at 5.7A and 10V Gate-Source Voltage
8A Continuous Drain Current at 25°C case temperature
30W Power Dissipation Capability
Low Gate Charge of 23nC at 10V Gate-Source Voltage
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High Efficiency and Low Switching Losses
Excellent Thermal Management
Robust and Reliable Performance
Suitable for a Variety of Power Conversion Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs max): ±20V
On-Resistance (Rds(on) max): 190mΩ
Continuous Drain Current (Id): 8A
Input Capacitance (Ciss max): 1150pF
Power Dissipation (Ptot max): 30W
Quality and Safety Features
Robust TO-220 Package
Compliance with Relevant Safety and Environmental Standards
Compatibility
The IPA65R190C7 is compatible with a wide range of power conversion circuits and applications, including switching power supplies, motor drives, and other power electronics systems.
Application Areas
Switching Power Supplies
Motor Drives
Inverters
Power Factor Correction Circuits
Other Power Electronics Applications
Product Lifecycle
The IPA65R190C7 is an active product in Infineon's portfolio and is not nearing discontinuation. Replacement or upgrade options may be available in the CoolMOS series or other Infineon MOSFET product lines.
Key Reasons to Choose This Product
High Efficiency and Low Switching Losses
Excellent Thermal Management Capabilities
Robust and Reliable Performance
Compatibility with a Wide Range of Power Conversion Applications
Availability of Replacement or Upgrade Options from Infineon
