Manufacturer Part Number
IPA60R600P6
Manufacturer
Infineon Technologies
Introduction
The IPA60R600P6 is a high-performance N-channel MOSFET transistor from the CoolMOS P6 series, designed for a wide range of power conversion applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600V
On-state Resistance (Rds(on)) as low as 600mΩ at 2.4A, 10V
Continuous Drain Current (Id) of 4.9A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 557pF at 100V
High power dissipation capability of up to 28W at Tc
Product Advantages
Excellent energy efficiency due to low conduction losses
Robust design for reliable operation in harsh environments
Compact and space-saving through-hole package
Key Technical Parameters
FET Type: N-Channel MOSFET
Gate-Source Voltage (Vgs) Max: ±20V
Threshold Voltage (Vgs(th)) Max: 4.5V at 200A
Gate Charge (Qg) Max: 12nC at 10V
Quality and Safety Features
Manufactured using Infineon's advanced MOSFET technology
Meets relevant safety and reliability standards
Compatibility
Suitable for a wide range of power conversion applications, such as switch-mode power supplies, motor drives, and industrial electronics.
Application Areas
Switching power supplies
Inductive loads (motors, solenoids)
Industrial and consumer electronics
Lighting and LED driver circuits
Product Lifecycle
The IPA60R600P6 is an active and widely available product in Infineon's product portfolio.
Replacements and upgrades may be available as technology advances.
Key Reasons to Choose This Product
Excellent energy efficiency and low conduction losses
Robust and reliable performance in harsh environments
Compact and space-saving through-hole package
Compatibility with a wide range of power conversion applications
Backed by Infineon's advanced MOSFET technology and quality standards
