Manufacturer Part Number
IPA60R600E6
Manufacturer
Infineon Technologies
Introduction
The IPA60R600E6 is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS E6 series. It is designed for a wide range of power conversion and switching applications.
Product Features and Performance
600V drain-source voltage rating
600mΩ maximum on-resistance at 2.4A, 10V
3A continuous drain current at 25°C case temperature
440pF maximum input capacitance at 100V
28W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Improved efficiency and reduced power losses due to low on-resistance
Compact and thermally efficient TO-220 package
Suitable for high-voltage, high-power applications
Robust design and high reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ
Continuous Drain Current (Id): 7.3A
Input Capacitance (Ciss): 440pF
Power Dissipation (Pd): 28W
Quality and Safety Features
RoHS 3 compliant
Meets industrial safety and reliability standards
Compatibility
The IPA60R600E6 is compatible with a wide range of power electronic circuits and systems that require high-voltage, high-power N-channel MOSFET transistors.
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial electronics
Product Lifecycle
The IPA60R600E6 is an active product and is not nearing discontinuation. Replacement or upgraded models may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Reliable and robust design suitable for demanding applications
Compact and thermally efficient TO-220 package
Wide operating temperature range
RoHS 3 compliance for environmentally-friendly applications
