Manufacturer Part Number
IPA057N08N3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for power management applications
Part of the OptiMOS3 series
Product Features and Performance
Optimized for high efficiency and low conduction losses
Excellent switching performance
Wide operating temperature range of -55°C to 175°C
Low gate charge and high switching speed
Product Advantages
Improved energy efficiency
Reduced system size and cooling requirements
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 5.7mΩ @ 60A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 4750pF @ 40V
Power Dissipation (Tc): 39W
Quality and Safety Features
Meets AEC-Q101 automotive qualification standards
Robust package design for reliable operation
Compatibility
Suitable for various power management applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Battery management systems
Application Areas
Automotive electronics
Industrial power supplies
Renewable energy systems
Consumer electronics
Product Lifecycle
This product is currently in production and actively supported by Infineon
No immediate plans for discontinuation or replacement
Key Reasons to Choose This Product
Exceptional energy efficiency and low conduction losses
Reliable and robust design for demanding applications
Wide operating temperature range and automotive-grade quality
Optimized switching performance for improved system design
Availability and support from a reputable semiconductor manufacturer
