Manufacturer Part Number
IPA057N06N3G
Manufacturer
Infineon Technologies
Introduction
The IPA057N06N3G is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the OptiMOS3 series, designed for various power switching applications.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
±20V Maximum Gate-Source Voltage (Vgs)
7mΩ Maximum On-Resistance (Rds(on)) at 60A, 10V
60A Continuous Drain Current (Id) at 25°C
6600pF Maximum Input Capacitance (Ciss) at 30V
38W Maximum Power Dissipation at Tc
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent performance and efficiency
Robust design for reliable operation
Suitable for various power switching applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 4V @ 58A
Drive Voltage (Max Rds(on), Min Rds(on)): 10V
Gate Charge (Qg): 82nC @ 10V
Quality and Safety Features
Rigorous quality control and testing
Compliance with relevant safety standards
Compatibility
Through-hole mounting (PG-TO220-3-111 package)
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and automotive applications
Product Lifecycle
Currently in active production
Availability of replacement and upgrade options
Key Reasons to Choose
Exceptional performance and efficiency
Robust and reliable design
Wide operating temperature range
Compatibility with various power electronics applications
Backed by Infineon's quality and safety standards
