Manufacturer Part Number
IMZA65R027M1HXKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance silicon carbide (SiC) MOSFET transistor
Product Features and Performance
650V SiC MOSFET with low on-resistance
Optimized for high-frequency and high-efficiency power conversion
Supports high-speed switching up to 100 kHz
Excellent thermal performance and reliability
Product Advantages
Reduced power losses and higher efficiency
Increased power density and smaller system size
Improved thermal management and higher reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): +23V/-5V
On-Resistance (Rds(on)): 34mΩ @ 38.3A, 18V
Continuous Drain Current (Id): 59A @ 25°C (Tc)
Input Capacitance (Ciss): 2131pF @ 400V
Power Dissipation (Tc): 189W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
TO-247-4 package for through-hole mounting
Application Areas
High-efficiency power conversion in industrial, automotive, and renewable energy applications
Suitable for use in inverters, motor drives, and other power conversion equipment
Product Lifecycle
Currently available, no known discontinuation plans
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Supports high-frequency and high-power applications
Proven reliability and long-term durability
Optimized for compact and high-density power systems