IMZ1AT108 - Rohm Semiconductor

Manufacturer Part Number

IMZ1AT108

Manufacturer

LAPIS Technology

Introduction

High-frequency, high-gain NPN and PNP transistor array in a small SC-74 package.

Product Features and Performance

High-frequency operation up to 180MHz

High DC current gain (hFE) of 120 min. at 1mA, 6V

Low collector-emitter saturation voltage of 400mV @ 5mA, 50mA

Wide collector-emitter breakdown voltage of 50V

Low collector cutoff current of 100nA max.

Compact SC-74 surface mount package

Product Advantages

Excellent high-frequency performance

High current gain for efficient amplification

Low saturation voltage for efficient switching

Wide voltage handling capability

Low leakage current for high-precision circuits

Space-saving surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 50V

Collector Current (max): 150mA

Collector Cutoff Current (max): 100nA

DC Current Gain (min): 120 @ 1mA, 6V

Transition Frequency: 180MHz (NPN), 140MHz (PNP)

Power Dissipation (max): 300mW

Operating Temperature: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Lead (Pb)-free

Moisture Sensitive Level (MSL): 1

Compatibility

Suitable for a wide range of high-frequency analog and digital circuits

Can be used as amplifiers, switches, and logic gates

Application Areas

Telecommunications equipment

Industrial electronics

Consumer electronics

Automotive electronics

Product Lifecycle

Currently in active production

No plans for discontinuation

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient signal processing

High current gain for effective amplification and switching

Low saturation voltage for energy-efficient operation

Wide voltage handling capability for versatile applications

Small surface mount package for compact design

RoHS3 compliance and lead-free construction for environmental responsibility