Manufacturer Part Number
IMZ1AT108
Manufacturer
LAPIS Technology
Introduction
High-frequency, high-gain NPN and PNP transistor array in a small SC-74 package.
Product Features and Performance
High-frequency operation up to 180MHz
High DC current gain (hFE) of 120 min. at 1mA, 6V
Low collector-emitter saturation voltage of 400mV @ 5mA, 50mA
Wide collector-emitter breakdown voltage of 50V
Low collector cutoff current of 100nA max.
Compact SC-74 surface mount package
Product Advantages
Excellent high-frequency performance
High current gain for efficient amplification
Low saturation voltage for efficient switching
Wide voltage handling capability
Low leakage current for high-precision circuits
Space-saving surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 50V
Collector Current (max): 150mA
Collector Cutoff Current (max): 100nA
DC Current Gain (min): 120 @ 1mA, 6V
Transition Frequency: 180MHz (NPN), 140MHz (PNP)
Power Dissipation (max): 300mW
Operating Temperature: -55°C to +150°C
Quality and Safety Features
RoHS3 compliant
Lead (Pb)-free
Moisture Sensitive Level (MSL): 1
Compatibility
Suitable for a wide range of high-frequency analog and digital circuits
Can be used as amplifiers, switches, and logic gates
Application Areas
Telecommunications equipment
Industrial electronics
Consumer electronics
Automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent high-frequency performance for efficient signal processing
High current gain for effective amplification and switching
Low saturation voltage for energy-efficient operation
Wide voltage handling capability for versatile applications
Small surface mount package for compact design
RoHS3 compliance and lead-free construction for environmental responsibility