Manufacturer Part Number
IKW30N65ES5XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance Trench IGBT transistor for industrial applications
Product Features and Performance
Trench IGBT technology
Low on-state voltage drop
Fast switching speed
High current density
Wide operating temperature range (-40°C to 175°C)
High power capability up to 188W
Product Advantages
Improved efficiency and reduced power losses
Compact and reliable design
Suitable for high-power industrial applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 62A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Reverse Recovery Time (trr): 75ns
Gate Charge: 70nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 560J (on), 320J (off)
Td (on/off) @ 25°C: 17ns/124ns
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Suitable for various industrial applications such as motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power supplies
Inverters
Other high-power industrial applications
Product Lifecycle
This product is an active and widely used Trench IGBT transistor from Infineon. There are no immediate plans for discontinuation, and replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
High power capability and efficiency
Fast switching speed and low conduction losses
Wide operating temperature range
Robust and reliable design
Compatibility with various industrial applications
