Manufacturer Part Number
IKW30N60TFKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) device for industrial and consumer applications
Product Features and Performance
600V Trench Field Stop IGBT
60A Collector Current Capability
Low Collector-Emitter Saturation Voltage (Vce(on))
Fast Switching Characteristics
Low Switching Losses
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal and electrical performance
Robust design for reliable operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 60A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Reverse Recovery Time (trr): 143ns
Gate Charge: 167nC
Current Collector Pulsed (Icm): 90A
Switching Energy: 1.46mJ
Td (on/off) @ 25°C: 23ns/254ns
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -40°C to 175°C
Compatibility
TO-247-3 Package
Suitable for a wide range of industrial and consumer power applications
Application Areas
Inverters
Converters
Motor Drives
Power Supplies
Welding Equipment
Industrial Controls
Product Lifecycle
Current product, no indication of discontinuation
Replacement/upgrade parts available from Infineon
Key Reasons to Choose This Product
High Efficiency and Low Losses
Robust and Reliable Performance
Excellent Thermal Management
Wide Operating Temperature Range
Ease of Integration in Power Designs
