Manufacturer Part Number
IKP03N120H2
Manufacturer
Infineon Technologies
Introduction
Single IGBT Transistor
Part of Discrete Semiconductor Products
Product Features and Performance
1200V Collector-Emitter Breakdown Voltage
6A Collector Current (Max)
8V Collector-Emitter Saturation Voltage
42ns Reverse Recovery Time
22nC Gate Charge
2ns/281ns Turn-On/Turn-Off Delay Time
Product Advantages
Efficient power switching
Reliable high-voltage operation
Fast switching capability
Key Technical Parameters
Voltage Rating: 1200V
Current Rating: 9.6A
Power Rating: 62.5W
Operating Temperature: -40°C to 150°C
Quality and Safety Features
RoHS3 Compliant
PG-TO220-3-1 Packaging
Compatibility
Through-hole mounting
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial control systems
Product Lifecycle
Current production model
Replacement/upgrade options available
Key Reasons to Choose
High voltage and current handling capability
Fast switching performance
Reliable and efficient power conversion
Widespread industrial applications