Manufacturer Part Number
IKP20N60T
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
Trench Field Stop IGBT
Operating Temperature: -40°C ~ 175°C (TJ)
Power Rating: 166 W
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 41 A
Collector-Emitter Saturation Voltage (Max): 2.05 V
Reverse Recovery Time: 41 ns
Gate Charge: 120 nC
Collector Current (Pulsed): 60 A
Switching Energy (On/Off): 310 μJ / 460 μJ
Turn-On/Off Delay Time: 18 ns / 199 ns
Product Advantages
Efficient Trench Field Stop IGBT technology
Low on-state voltage and switching losses
Suitable for high-power switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600 V
Collector Current (Max): 41 A
Collector-Emitter Saturation Voltage (Max): 2.05 V
Reverse Recovery Time: 41 ns
Gate Charge: 120 nC
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature operation up to 175°C
Compatibility
TO-220-3 package
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available, no discontinuation plans known
Key Reasons to Choose This Product
Efficient Trench Field Stop IGBT technology
Low on-state voltage and switching losses
Suitable for high-power switching applications
RoHS3 compliance and high-temperature operation
