Manufacturer Part Number
IGB15N60TATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for use in various power electronics applications.
Product Features and Performance
Trench IGBT technology provides low on-state voltage and fast switching
Rated for 600V collector-emitter voltage and up to 30A collector current
Low typical collector-emitter saturation voltage of 2.05V @ 15V, 15A
Fast switching with turn-on time of 17ns and turn-off time of 188ns
Capable of handling up to 45A pulsed collector current
Wide operating temperature range of -40°C to 175°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Reliable and robust performance in high-power applications
Compact surface-mount package for space-saving design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 30A
Collector-Emitter Saturation Voltage: 2.05V @ 15V, 15A
Gate Charge: 87nC
Switching Times: 17ns (on), 188ns (off)
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Robust and reliable design for long-term operation
Compatibility
This IGBT is compatible with a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power inverters and converters
Uninterruptible power supplies (UPS)
Welding equipment
Household appliances
Product Lifecycle
This IGBT model is currently in production and widely available. There are no immediate plans for discontinuation, and replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High efficiency and low losses due to advanced Trench IGBT technology
Reliable and robust performance in high-power applications
Compact surface-mount package for space-saving design
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
IGB15N60T